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| CYStech Electronics Corp. Gentral Purpose NPN Epitaxial Planar Transistor Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2002.12.23 Page No. : 1/4 BTNA14N3 Description * The BTNA14N3 is a darlington amplifier transistor * Complementary to BTPA64N3. Equivalent Circuit BTNA14N3 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 30 30 10 0.3 225 150 -55~+150 Unit V V V A mW C C BTNA14N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2002.12.23 Page No. : 2/4 Characteristics (Ta=25C) Symbol BVCBO BVCES BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 30 30 10 10K 20K 125 Typ. Max. 100 100 1.5 2.0 6 Unit V V V nA nA V V Test Conditions IC=100uA IC=100uA IE=10uA VCE=30V VEB=10V IC=100mA, IB=0.1mA VCE=5V, IC=100mA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% MHz pF Characteristic Curves Current Gain vs Collector Current 100000 Saturation Voltage---(mV) HFE@VCE=5V Current Gain---HFE 10000 VCE(SAT)@IC=1000IB Saturation Voltage vs Collector Current 10000 1000 1000 1 10 100 1000 Collector Current---IC(mA) 100 1 10 100 1000 Collector Current ---IC(mA) BTNA14N3 CYStek Product Specification CYStech Electronics Corp. Saturation Voltage vs Collector Current Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2002.12.23 Page No. : 3/4 ON Voltage vs Collector Current 10000 10000 Saturation Voltage---(mV) ON Voltage --- (mV) VBE(SAT)@IC=1000IB VBE(ON)@VCE=5V 1000 1000 1 10 100 1000 Collector Current ---IC(mA) 100 0.1 1 10 100 1000 Collector Current ---IC(mA) Cutoff Frequency vs Collector Current 1 Cutoff Frequency---FT(GHZ) PD - Ta 250 Power Dissipation---PD(mW) 100 200 150 100 50 0 FT@VCE=5V 0.1 1 10 Collector Current---IC(mA) 0 50 100 150 200 Ambient Temperature ---Ta( ) BTNA14N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C203N3-H Issued Date : 2002.05.11 Revised Date : 2002.12.23 Page No. : 4/4 A L 3 B 1 2 S Marking: TE 1N V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D H K J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Dimension and tolerance based on our Spec. dated Feb. 18,2002. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA14N3 CYStek Product Specification |
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